Suzhou National Laboratory Publishes Significant Achievement in Science as First Affiliation

Recently, the team of Xinran Wang and Jinlan Wang from Suzhou Laboratory has developed the "oxy-metal-organic chemical vapor deposition (oxy-MOCVD)" technology, solving the long-standing kinetic bottleneck in the industrial preparation of two-dimensional semiconductors. The related work, titled "Kinetic acceleration of MoS₂ growth by oxy-metal-organic chemical vapor deposition," was published online in the journal Science on January 30, 2026, with Suzhou Laboratory as the primary affiliation.

Two-dimensional semiconductors are regarded as key new materials for breaking through the transistor scaling bottleneck and achieving leapfrog development in post-Moore integrated circuits. However, their industrialization has long faced challenges such as difficulty in preparing large-size single crystals, slow growth rates, and high impurity concentrations.

The research team innovatively proposed the oxy-MOCVD technique. By introducing oxygen to participate in the pre-reaction of precursors, the technique accelerates material growth and suppresses impurity incorporation from the source of chemical reaction kinetics, achieving efficient and clean growth of high-quality 2D semiconductor materials.

This technique offers excellent process compatibility and controllability. For the first time internationally, the team prepared a 6-inch molybdenum disulfide (MoS₂) single-crystal wafer with large-domain size. The domain area achieved an improvement of over five orders of magnitude compared to traditional MOCVD techniques, and the growth rate was increased by 2-3 orders of magnitude. The room-temperature electron mobility of the MoS₂ field-effect transistors averaged 101.3 cm²·V^-1·s^-1, with a peak value of 122.9 cm²·V^-1·s^-1, and an on/off ratio of 10⁹. This refreshes the performance record for 2D semiconductors prepared by industrialization techniques, achieving a perfect integration of laboratory-level high quality and industrial-scale production.

This breakthrough, combined with the team's previously developed "turning stone into crystal" technique (published in Science, eaea0849 (2025)), forms a complete technological path of "substrate engineering + kinetic regulation". It provides core support for the mass production of 2D semiconductors and will accelerate their application in fields such as angstrom-scale integrated circuits. This advancement is expected to foster China's core competitive advantages in next-generation information technology.