Suzhou Laboratory's achievements were selected as one of the top ten research advances in China's semiconductor in 2023

On February 5th, the results of the "Top 10 Research Advances in Chinese Semiconductors in 2023" organized and selected by the Journal of Semiconductors were announced. Suzhou Laboratory's "Contact resistance of single-atomic layer MoS2 approaches the quantum limit" stood out among 54 candidate achievements and was successfully included.

This research achievement was carried out by the team led by Prof. Xinran Wang from the Frontier Department. The team proposed a new mechanism of enhancing ohmic contact through band hybridization. By using semi-metallic antimony contact, the contact resistance of single-atom-layer MoS2 was successfully reduced to 42 Ω·μm, which was the first time lower than that of silicon-based devices bonded by chemical bonds, approached the theoretical quantum limit, and further achieved the highest current record for single-layer two-dimensional semiconductor transistors. This achievement was published in Nature (Nature, 2023, 613, 274-279), and was simultaneously selected as an ESI hot and highly cited paper.

The selection activity of "Top Ten Research Advances in Chinese Semiconductors" has received extensive attention and high recognition from experts and scholars in the semiconductor field. Taking this selection as an opportunity, the Frontier Department will continue to strengthen its innovation capacity building, ensure the output of major achievements, and contribute to the high-quality development of Suzhou Laboratory.